Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Difference differential amplifiers (DDA), which were built on FinFET and carbon nanotube FET (CNTFET), are frequently used for signal processing owing to their advantages of low-power dissipation reduced device dimension. In this work, high-performance DDA was established using CNTFET model parameters as well 7 nm 14 technology. The circuit in scenario identically the same one previously. With use Verilog AMS code-based Stanford applied FinFETs, schematic capture simulations carried out Symica environment. mostly measurements assessing performance operational also adopted DDA. CNTFET-based difference have slew rates 10.8 V/femtosecond 11.2 mV/femtosecond, respectively, with settling times 0.65 femtosecond 0.43 femtosecond, respectively. power supply rejection ratio (PSRR) is 2.53 dB a dynamic range 198 mV 6 operating at 0.6 V DC. incentives appropriateness designed study any analogue front end further demonstrated by achievement open loop gain 116.03 BW 4 GHz phase margin 270 common mode -28.65 55.14 MHz 270.